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| FDB031N08 N-Channel PowerTrench(R) MOSFET July 2008 FDB031N08 N-Channel Features * RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant PowerTrench(R) tm MOSFET Description This N-Channel MOSFET is produced using Fairchild Semiconductor's adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 75V, 235A, 3.1m Application * DC to DC convertors / Synchronous Rectification D D G D2-PAK G S FDB Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 C, Silicon Limited) Continuous (TC = 100oC, Silicon Limited) Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) o FDB031N08 75 20 235* 165* 120 940 1995 5.5 375 2.5 -55 to +175 300 Units V V A A A A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 Ratings 0.4 62.5 Units o C/W (c)2008 Fairchild Semiconductor Corporation FDB031N08 Rev. A3 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDB031N08 Device FDB031N08 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25 C VDS = 75V, VGS = 0V VDS = 75V, TC = 150oC VGS = 20V, VDS = 0V o 75 - 0.05 - 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A (Note 4) 2.5 - 3.5 2.4 180 4.5 3.1 - V m S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 60V, ID = 75A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 11400 1360 595 169 60 47 15160 1810 800 220 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 37.5V, ID = 75A RGEN = 25, VGS = 10V (Note 4, 5) - 230 191 335 121 470 392 680 252 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s (Note 4) - 53 77 235 940 1.3 - A A V ns nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB031N08 Rev. A3 2 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 3000 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 500 100 ID,Drain Current[A] ID,Drain Current[A] 100 175 C o -55 C o 10 25 C o 10 1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250s Pulse Test 0.1 0.01 1 0.1 VDS,Drain-Source Voltage[V] 1 2 4 6 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.0030 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 400 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 100 175 C 25 C o o VGS = 10V 0.0025 VGS = 20V 10 0.0020 0 *Note: TC = 25 C o *Notes: 1. VGS = 0V 100 200 300 ID, Drain Current [A] 400 1 0.0 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics 100000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 15V VDS = 37.5V VDS = 60V 8 Capacitances [pF] 10000 Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz 6 4 1000 Crss 2 *Note: ID = 75A 100 0.1 0 1 10 VDS, Drain-Source Voltage [V] 80 0 50 100 150 Qg, Total Gate Charge [nC] 200 FDB031N08 Rev. A3 3 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 75A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 250 1000 10s ID, Drain Current [A] 100s 1ms 10ms 200 ID, Drain Current [A] 100 Operation in This Area is Limited by R DS(on) 150 Limited by package DC 10 100 *Notes: 1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 50 0.1 1 10 VDS, Drain-Source Voltage [V] 100 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 0.5 Thermal Response [ZJC] 0.5 0.1 0.2 0.1 0.05 PDM t1 t2 0.01 0.02 0.01 Single pulse *Notes: 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDB031N08 Rev. A3 4 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB031N08 Rev. A3 5 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDB031N08 Rev. A3 6 www.fairchildsemi.com FDB031N08 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters FDB031N08 Rev. A3 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 |
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